摘要: |
为满足集成电路发展需求,通过向HfO2掺入Al元素形成Al掺杂的HfO2新型高k材料,并在不同的环境和温度下进行退火,研究其电学特性的变化。通过对电学参数的分析,研究Al掺杂HfO2材料体内正电荷缺陷、k值(晶相变化)、界面层厚度、栅漏电等的影响。最终,在N2环境中700℃退火条件下,Al掺杂HfO2的电学特性达到最优,其EOT为0.88nm、Vfb为0.46V和Ig为2.19×10-4A/cm2。最优条件下的EOT可以满足14/16nm器件的需要(EOT<1nm),Ig比相同EOT的HfO2材料小3个数量级。 |
关键词: 微电子 Al掺杂的HfO2 退火工艺 结晶 C-V特性 高k |
DOI: |
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基金项目:Ge基MOS器件迁移率的远程库伦散射机制的研究 |
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Study on Post Deposition Annealing Process of Al-Doped HfO2 High - k Dielectric |
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Abstract: |
In order to meet the development needs of integrated circuits, Al-doped HfO2 new high-k materials were formed by doping Al into HfO2, and annealing was performed under different environments and temperatures to study the changes in electrical characteristics.Through the analysis of electrical parameters, the effects of Al-doped HfO2 material on positive charge defects, k value (change of crystal phase), interface layer thickness, gate leakage, etc. were studied.Finally, under the annealing condition of 700°C in N2 environment, the electrical properties of Al-doped HfO2 are optimized,and the EOT is 0.88nm, Vfb is 0.46V and Ig is 2.19×10-4 A/cm2. Meanwhile, its EOT can meet the request of 14/16nm devices (EOT<1nm), and its Ig is 3 orders of magnitude smaller than the HfO2 under the same EOT. |
Key words: Microelectronics Al doped HfO2 post deposition annealing crystallization C-V characteristics high k |