| 摘要: |
| 高密度等离子体化学气相淀积(HDP CVD),具有卓越的填孔能力和可靠的电学特性等诸多优点,因此它被广泛应用于超大规模集成电路制造工艺中。本文研究了金属层间介质(IMD)的HDP CVD过程对栅氧化膜的等离子充电损伤。研究表明在HDP淀积结束时的光电导效应使得IMD层(包括FSG和USG)在较短的时间内处于导电状态,较大电流由IMD层流经栅氧化膜,在栅氧化膜中产生缺陷,从而降低了栅氧化膜可靠性。通过对HDP CVD结束后反应腔内气体组分的调节,IMD层的光电导现象得到了一定程度的抑制,等离子充电损伤得到了改善。 |
| 关键词: 等离子体充电损伤 高密度等离子体化学气相淀积（HDP CVD） 栅氧化膜 光电导 |
| DOI： |
|
| 基金项目:国家自然科学基金资助(60676047,60606010);; |
|
| Mechanism of Plasma Charging Damage for HDP Deposition |
|
| () |
| Abstract: |
| For its stability and good Gap fill performance, high density plasma chemical vapour deposition (HDP CVD) is widely used in VLSI manufacture. The plasma charging damage from HDP CVD process is investigated. After deposition, the Transient photoconduction of IMD layer (including FSG and USG) enable the plasma current to leak through and stress the underlying gate oxide. After deposition, we modified the gas component in the chamber, so that the charging damage is reduced obviously. |
| Key words: plasma charging damage HDP CVD gate oxide photoconduction |