| 摘要:分别在不同基极掺杂浓度、集电极掺杂浓度、发射极掺杂浓度和不同Ge组分含量的情况下,运用半导体器件模拟软件—MEDICI,对SiGe HBT器件的直流特性和频率特性进行了数值模拟,得出了SiGe HBT器件的集电极电流IC、基极电流IB、电流增益β和截止频率fT变化的初步规律。 |
| 关键词: SiGe HBT 电流增益 截止频率 掺杂浓度 数值模拟 |
|
| Numerical Simulation and Analysis of SiGe HBT’s Characteristic Parameters |
|
|
| Abstract:DC and AC characteristics of SiGe HBT were simulated by the two-dimensional device numerical simulation software—MEDICI. The characteristic parameters were simulated in different base doping concentration, collector doping concentration, emitter doping concentration and different Ge content, respectively. The primary rules of collector current IC, base current IB, current gain β and cut-off frequency fT of SiGe HBT were concluded. |
| Key words: SiGe HBT current gain cut-off frequency doping concentration numerical simulation |