| 摘要: |
| 采用CHF3、CHF3+CF4和CHF3+O2三种不同气体体系作氮化硅的反应离子刻蚀（RIE）实验，研究了不同刻蚀气体对刻蚀速率、均匀性和对光刻胶的选择比三个刻蚀参数的影响。通过优化气体配比，比较刻蚀结果，最终获得了刻蚀速率为119 nm/min，均匀性为0.6%，对光刻胶选择比为3.62的刻蚀氮化硅的优化工艺。 |
| 关键词: 反应离子刻蚀 氮化硅 刻蚀气体 优化 |
| DOI： |
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| Study on the the Reactive Ion Etching of Si3N4 |
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| Abstract: |
| Reactive ion etching (RIE) of silicon nitride was performed with CHF3, CHF3+CF4, and CHF3+O2 as etching gases. The relationship was researched between different etching gases and the three parameters of etching rate, uniformity & selectivity. By optimizing the ratio of different gases and comparing the different etching results, the optimized etching process were abtained with the etching rate as 119 nm/min, the uniformity as 0.6% and the PR selectivity as 3.62. |
| Key words: RIE silicon nitride etching gas optimization |