| 摘要: |
| 摘 要：本文主要阐述了电荷泵技术在14V HV MOS晶体管可靠性研究中的应用。使用了一种改进的电荷泵技术分析了经过热载流子加压后的器件特性。使用这种方法，我们可以精确描述器件损伤的位置和程度，以及可以精确评估由于HCI效应引起的界面缺陷的变化，为器件优化与工艺改进提供重要参考信息。 |
| 关键词: 关键字：电荷泵 界面缺陷密度 高压MOS 热载流子注入 |
| DOI： |
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| 基金项目:上海市自然科学基金 |
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| The application of charge pumping technology on High-Voltage MOSFET reliability investigation |
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| Abstract: |
| Abstract ： The application of charge pumping technology on High-Voltage (HV) 14V MOSFET reliability investigation is described in this paper. Device after HCI stress is analyzed by a developed asymmetric charge pumping technology. With this method, the damage location and degree can be described and the variation of interface traps caused by HCI can be quantified. It is evident that charge pumping technology can provide important information for the device optimization and process improvement.
Key words：charge pumping (CP), interface trap density, High-voltage (HV) transistors, HCI |
| Key words: Key words：charge pumping (CP), interface trap density, High-voltage (HV) transistors, HCI |